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源截断和耗尽:定量原位 TEM 拉伸测试的见解。

Source truncation and exhaustion: insights from quantitative in situ TEM tensile testing.

机构信息

Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States.

出版信息

Nano Lett. 2011 Sep 14;11(9):3816-20. doi: 10.1021/nl201890s. Epub 2011 Aug 1.

Abstract

A unique method for quantitative in situ nanotensile testing in a transmission electron microscope employing focused ion beam fabricated specimens was developed. Experiments were performed on copper samples with minimum dimensions in the 100-200 nm regime oriented for either single slip or multiple slip, respectively. We observe that both frequently discussed mechanisms, truncation of spiral dislocation sources and exhaustion of defects available within the specimen, contribute to high strengths and related size-effects in small volumes. This suggests that in the submicrometer range these mechanisms should be considered simultaneously rather than exclusively.

摘要

开发了一种独特的方法,可在使用聚焦离子束制造的样品的透射电子显微镜中进行定量原位纳米拉伸测试。在最小尺寸为 100-200nm 的铜样品上进行了实验,这些样品分别定向用于单滑或多滑。我们观察到,两种经常讨论的机制,即螺旋位错源的截断和样品内可用缺陷的耗尽,都导致了小体积中高强度和相关的尺寸效应。这表明在亚微米范围内,这些机制应该同时考虑,而不是单独考虑。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/53f4/3172822/5777b650677f/nl-2011-01890s_0001.jpg

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