Institut d'Electronique Microélectronique et Nanotechnologie, CNRS, Univ. of Lille, Avenue Poincaré, 59652, Villeneuve d'Ascq, France.
Small. 2011 Sep 19;7(18):2607-13. doi: 10.1002/smll.201100915. Epub 2011 Aug 1.
A uniform array of single-grain Au nanodots, as small as 5-8 nm, can be formed on silicon using e-beam lithography. The as-fabricated nanodots are amorphous, and thermal annealing converts them to pure Au single crystals covered with a thin SiO(2) layer. These findings are based on physical measurements, such as atomic force microscopy (AFM), atomic-resolution scanning transmission electron microscopy, and chemical techniques using energy dispersive X-ray spectroscopy. A self-assembled organic monolayer is grafted on the nanodots and characterized chemically with nanometric lateral resolution. The extended uniform array of nanodots is used as a new test-bed for molecular electronic devices.
使用电子束光刻技术，可在硅衬底上形成尺寸小至 5-8nm 的规则单分散金纳米点阵列。所制备的纳米点呈非晶态，而热退火可将其转变为纯金单晶，表面覆盖一层薄的二氧化硅（SiO2）层。这些发现基于原子力显微镜（AFM）、原子分辨扫描透射电子显微镜以及能量色散 X 射线能谱等物理测量方法。在纳米点上接枝了自组装单层，并利用纳米级横向分辨率的化学技术对其进行了化学表征。扩展的规则单分散纳米点阵列可用作新型的分子电子器件的测试平台。
