Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
Proc Natl Acad Sci U S A. 2011 Aug 9;108(32):13002-6. doi: 10.1073/pnas.1018388108. Epub 2011 Jul 26.
We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric double-layer transistors to continuously tune the carrier density up to values exceeding 10(14) cm(-2). Whereas in monolayer the conductivity saturates, in bi- and trilayer filling of the higher-energy bands is observed to cause a nonmonotonic behavior of the conductivity and a large increase in the quantum capacitance. These systematic trends not only show how the intrinsic high-density transport properties of graphene can be accessed by field effect, but also demonstrate the robustness of ion-gated graphene, which is crucial for possible future applications.
我们使用双电层晶体管对单层、双层和三层石墨烯中的高载流子密度输运进行了比较研究,该晶体管可连续将载流子密度调至超过 10(14) cm(-2)的超高值。尽管在单层中,电导率会达到饱和,但在双层和三层中,填充更高能量带会导致电导率呈现非单调行为,并大幅增加量子电容。这些系统趋势不仅表明了如何通过场效应来获得石墨烯的固有高密度输运特性,还证明了离子门控石墨烯的稳健性,这对于未来可能的应用至关重要。