Centre for Graphene Science, CEMPS, University of Exeter, Exeter, EX4 4QL, U.K.
Nano Lett. 2011 Sep 14;11(9):3912-6. doi: 10.1021/nl2020697. Epub 2011 Aug 24.
We demonstrate the possibility to selectively reduce insulating fluorinated graphene to conducting and semiconducting graphene by electron beam irradiation. Electron-irradiated fluorinated graphene microstructures show 7 orders of magnitude decrease in resistivity (from 1 TΩ to 100 kΩ), whereas nanostructures show a transport gap in the source-drain bias voltage. In this transport gap, electrons are localized, and charge transport is dominated by variable range hopping. Our findings demonstrate a step forward to all-graphene transparent and flexible electronics.
我们通过电子束辐照证明了选择性地将绝缘氟化石墨烯还原为导电和半导体石墨烯的可能性。电子辐照氟化石墨烯微结构的电阻率降低了 7 个数量级（从 1TΩ 降低到 100kΩ），而纳米结构在源漏偏压下显示出传输间隙。在这个传输间隙中，电子被局域化，电荷输运由变程跳跃主导。我们的发现为全石墨烯透明和柔性电子学迈出了一步。
