School of EECS, Oregon State University, 1148 Kelley Engineering Center, Corvallis, Oregon 97331-5501, USA.
J Am Chem Soc. 2011 Oct 26;133(42):16852-60. doi: 10.1021/ja204670s. Epub 2011 Oct 3.
A plot of electron affinity (EA) and ionization potential (IP) versus energy band gap (E(G)) for 69 binary closed-shell inorganic semiconductors and insulators reveals that E(G) is centered about the hydrogen donor/acceptor ionization energy ε(+/-). Thus, ε(+/-), or equivalently the standard hydrogen electrode (SHE) energy, functions as an absolute energy reference, determining the tendency of an atom to be either a cation or anion in a compound. This empirical trend establishes the basis for defining a new solid state energy (SSE) scale. This SSE scale makes possible simple approaches for quantitatively assessing electronegativity, chemical hardness, and ionicity, while also providing new insight into the periodic trends of solids.
对 69 种二元满壳无机半导体和绝缘体的电子亲和能 (EA) 和电离能 (IP) 与能带隙 (E(G)) 的关系图表明,E(G) 中心位于氢供体/受体电离能 ε(+/-)附近。因此,ε(+/-)或等效的标准氢电极 (SHE) 能量可作为绝对能量参考,决定原子在化合物中形成阳离子或阴离子的趋势。这种经验趋势为定义新的固态能量 (SSE) 标度奠定了基础。这个 SSE 标度使得定量评估电负性、化学硬度和离子性变得更加简单,同时也为固体的周期性趋势提供了新的见解。