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本文引用的文献

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Graphene and nanowire transistors for cellular interfaces and electrical recording.用于细胞界面和电记录的石墨烯和纳米线晶体管。
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Evolution of graphene growth on Ni and Cu by carbon isotope labeling.通过碳同位素标记研究镍和铜上石墨烯的生长演变。
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整体式石墨烯-石墨基集成电子器件的合成。

Synthesis of monolithic graphene-graphite integrated electronics.

机构信息

School of Nano-Biotechnology and Chemical Engineering, Graphene Research Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City, 689-798, Republic of Korea.

出版信息

Nat Mater. 2011 Nov 20;11(2):120-5. doi: 10.1038/nmat3169.

DOI:10.1038/nmat3169
PMID:22101813
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3602909/
Abstract

Encoding electronic functionality into nanoscale elements during chemical synthesis has been extensively explored over the past decade as the key to developing integrated nanosystems with functions defined by synthesis. Graphene has been recently explored as a two-dimensional nanoscale material, and has demonstrated simple device functions based on conventional top-down fabrication. However, the synthetic approach to encoding electronic functionality and thus enabling an entire integrated graphene electronics in a chemical synthesis had not previously been demonstrated. Here we report an unconventional approach for the synthesis of monolithically integrated electronic devices based on graphene and graphite. Spatial patterning of heterogeneous metal catalysts permits the selective growth of graphene and graphite, with a controlled number of graphene layers. Graphene transistor arrays with graphitic electrodes and interconnects were formed from the synthesis. These functional, all-carbon structures were transferable onto a variety of substrates. The integrated transistor arrays were used to demonstrate real-time, multiplexed chemical sensing and more significantly, multiple carbon layers of the graphene-graphite device components were vertically assembled to form a three-dimensional flexible structure which served as a top-gate transistor array. These results represent substantial progress towards encoding electronic functionality through chemical synthesis and suggest the future promise of one-step integration of graphene-graphite based electronics.

摘要

在过去的十年中,人们广泛探索了在化学合成过程中对纳米级元素进行电子功能编码,这是开发具有合成定义功能的集成纳米系统的关键。石墨烯最近被探索为二维纳米级材料,并基于传统的自上而下制造方法展示了简单的器件功能。然而,以前尚未证明对电子功能进行编码并因此能够在化学合成中实现整个集成石墨烯电子学的合成方法。在这里,我们报告了一种基于石墨烯和石墨的非常规方法来合成整体集成的电子器件。异质金属催化剂的空间图案化允许选择性地生长具有受控层数的石墨烯和石墨。从合成中形成了具有石墨电极和互连的石墨烯晶体管阵列。这些功能齐全的全碳结构可以转移到各种基板上。集成晶体管阵列被用于实时、多路复用的化学传感,更重要的是,将石墨烯-石墨器件组件的多个碳层垂直组装以形成三维柔性结构,用作顶栅晶体管阵列。这些结果代表了通过化学合成对电子功能进行编码的重大进展,并表明了一步集成基于石墨烯-石墨的电子学的未来前景。