Department of Biochemistry and Molecular Biology, The University of Chicago, 929 East 57th Street, Chicago, IL 60637, USA.
Neuron. 2011 Dec 8;72(5):713-20. doi: 10.1016/j.neuron.2011.09.024.
Voltage-sensing domains (VSDs) undergo conformational changes in response to the membrane potential and are the critical structural modules responsible for the activation of voltage-gated channels. Structural information about the key conformational states underlying voltage activation is currently incomplete. Through the use of experimentally determined residue-residue interactions as structural constraints, we determine and refine a model of the Kv channel VSD in the resting conformation. The resulting structural model is in broad agreement with results that originate from various labs using different techniques, indicating the emergence of a consensus for the structural basis of voltage sensing.
电压感应结构域(VSD)会响应膜电位发生构象变化,是负责激活电压门控通道的关键结构模块。目前,电压激活的关键构象状态的结构信息尚不完全。通过使用实验确定的残基-残基相互作用作为结构约束,我们确定并细化了处于静息构象的 Kv 通道 VSD 的模型。得到的结构模型与来自不同实验室使用不同技术的结果基本一致,表明电压感应的结构基础已经达成共识。