Lee Hyung-Min, Ghovanloo Maysam
GT-Bionics Lab, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30308 USA.
IEEE Trans Circuits Syst I Regul Pap. 2011;58(8):1749-1760. doi: 10.1109/TCSI.2010.2103172.
We present an active full-wave rectifier with offset-controlled high speed comparators in standard CMOS that provides high power conversion efficiency (PCE) in high frequency (HF) range for inductively powered devices. This rectifier provides much lower dropout voltage and far better PCE compared to the passive on-chip or off-chip rectifiers. The built-in offset-control functions in the comparators compensate for both turn-on and turn-off delays in the main rectifying switches, thus maximizing the forward current delivered to the load and minimizing the back current to improve the PCE. We have fabricated this active rectifier in a 0.5-μm 3M2P standard CMOS process, occupying 0.18 mm(2) of chip area. With 3.8 V peak ac input at 13.56 MHz, the rectifier provides 3.12 V dc output to a 500 Ω load, resulting in the PCE of 80.2%, which is the highest measured at this frequency. In addition, overvoltage protection (OVP) as safety measure and built-in back telemetry capabilities have been incorporated in our design using detuning and load shift keying (LSK) techniques, respectively, and tested.
我们展示了一种采用标准CMOS工艺、带有失调控制高速比较器的有源全波整流器,该整流器可为电感供电设备在高频(HF)范围内提供高功率转换效率(PCE)。与片上或片外无源整流器相比,此整流器具有更低的压差和更好的PCE。比较器中内置的失调控制功能可补偿主整流开关的导通和关断延迟,从而使输送到负载的正向电流最大化,并使反向电流最小化,以提高PCE。我们已采用0.5μm 3M2P标准CMOS工艺制造了这种有源整流器,其芯片面积为0.18 mm²。在13.56 MHz频率下,当交流输入峰值为3.8 V时,该整流器向500Ω负载提供3.12 V直流输出,PCE为80.2%,这是该频率下测得的最高值。此外,我们分别采用失谐和负载移频键控(LSK)技术,在设计中加入了作为安全措施的过电压保护(OVP)和内置反向遥测功能,并进行了测试。