State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, China.
Department of Macromolecular Science, Fudan University, Shanghai, 200433, China.
Nat Commun. 2019 Mar 13;10(1):1188. doi: 10.1038/s41467-019-09016-0.
Relatively low mobility and thermal conductance create challenges for application of tungsten diselenide (WSe) in high performance devices. Dielectric interface is of extremely importance for improving carrier transport and heat spreading in a semiconductor device. Here, by near-equilibrium plasma-enhanced chemical vapour deposition, we realize catalyst-free growth of poly-crystalline two-dimensional hexagonal-boron nitride (2D-BN) with domains around 20~ 200 nm directly on SiO/Si, quartz, sapphire, silicon or SiO/Si with three-dimensional patterns at 300 °C. Owing to the atomically-clean van-der-Walls conformal interface and the fact that 2D-BN can better bridge the vibrational spectrum across the interface and protect interfacial heat conduction against substrate roughness, both improved performance and thermal dissipation of WSe field-effect transistor are realized with mobility around 56~ 121 cm V s and saturated power intensity up to 4.23 × 10 W cm. Owing to its simplicity, conformal growth on three-dimensional surface, compatibility with microelectronic process, it has potential for application in future two-dimensional electronics.
相对较低的迁移率和热导率给二硒化钨（WSe）在高性能器件中的应用带来了挑战。介电界面对于提高半导体器件中的载流子输运和热扩散非常重要。在这里，通过近平衡等离子体增强化学气相沉积，我们在 300°C 下直接在 SiO/Si、石英、蓝宝石、硅或具有三维图案的 SiO/Si 上实现了无催化剂的多晶二维六方氮化硼（2D-BN）的生长，其畴尺寸约为 20200nm。由于原子级清洁的范德华共形界面以及 2D-BN 可以更好地桥接界面两侧的振动谱并保护界面热导不受衬底粗糙度的影响，因此实现了 WSe 场效应晶体管的性能和热耗散的改善，迁移率约为 56121cmV s，饱和功率强度高达 4.23×10W cm。由于其简单性、对三维表面的共形生长、与微电子工艺的兼容性，它具有在未来二维电子学中应用的潜力。
