氮化铝/碳化硅复合材料板实现高频高 Q 值微机械谐振器。

AlN/3C-SiC composite plate enabling high-frequency and high-Q micromechanical resonators.

机构信息

Department of Mechanical Engineering, Berkeley Sensor and Actuator Center, University of California at Berkeley, 94720, USA.

出版信息

Adv Mater. 2012 May 22;24(20):2722-7. doi: 10.1002/adma.201104842. Epub 2012 Apr 12.

DOI:10.1002/adma.201104842

PMID:22495881

Abstract

An AlN/3C-SiC composite layer enables the third-order quasi-symmetric (QS(3)) Lamb wave mode with a high quality factor (Q) characteristic and an ultra-high phase velocity up to 32395 ms(-1). A Lamb wave resonator utilizing the QS(3) mode exhibits a low motional impedance of 91 Ω and a high Q of 5510 at a series resonance frequency (f(s)) of 2.92 GHz, resulting in the highest f(s)·Q product of 1.61 × 10(13) Hz among the suspended piezoelectric thin film resonators reported to date.

摘要

氮化铝/3C-碳化硅复合层使三阶准对称（QS(3)）兰姆波模式具有高品质因数（Q）特性和超高相速度，高达 32395 ms(-1)。利用 QS(3)模式的兰姆波谐振器在串联谐振频率（f(s)）为 2.92 GHz 时表现出 91 Ω 的低动阻抗和 5510 的高 Q，是迄今为止报道的悬浮压电薄膜谐振器中 f(s)·Q 乘积最高的，达到 1.61 × 10(13) Hz。