IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, United States.
Nano Lett. 2012 Jun 13;12(6):3062-7. doi: 10.1021/nl300904k. Epub 2012 May 14.
High-performance graphene transistors for radio frequency applications have received much attention and significant progress has been achieved. However, devices based on large-area synthetic graphene, which have direct technological relevance, are still typically outperformed by those based on mechanically exfoliated graphene. Here, we report devices with intrinsic cutoff frequency above 300 GHz, based on both wafer-scale CVD grown graphene and epitaxial graphene on SiC, thus surpassing previous records on any graphene material. We also demonstrate devices with optimized architecture exhibiting voltage and power gains reaching 20 dB and a wafer-scale integrated graphene amplifier circuit with voltage amplification.
用于射频应用的高性能石墨烯晶体管受到了广泛关注，并取得了重大进展。然而，与基于机械剥离石墨烯的器件相比，基于大面积合成石墨烯的器件在性能上通常仍处于劣势。在此，我们报道了基于晶圆级 CVD 生长石墨烯和 SiC 外延石墨烯的器件，其本征截止频率均高于 300 GHz，超过了以往任何石墨烯材料的记录。我们还展示了采用优化结构的器件，其电压和功率增益分别达到 20 dB，以及具有电压放大功能的晶圆级集成石墨烯放大器电路。
