SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Human Interface Nano Technology (HINT), Sungkyunkwan University, Suwon, 440-746, Korea.
ACS Nano. 2012 Jun 26;6(6):5360-5. doi: 10.1021/nn301207d. Epub 2012 Jun 5.
Graphene films grown on metal substrates by chemical vapor deposition (CVD) method have to be safely transferred onto desired substrates for further applications. Recently, a roll-to-roll (R2R) method has been developed for large-area transfer, which is particularly efficient for flexible target substrates. However, in the case of rigid substrates such as glass or wafers, the roll-based method is found to induce considerable mechanical damages on graphene films during the transfer process, resulting in the degradation of electrical property. Here we introduce an improved dry transfer technique based on a hot-pressing method that can minimize damage on graphene by neutralizing mechanical stress. Thus, we enhanced the transfer efficiency of the large-area graphene films on a substrate with arbitrary thickness and rigidity, evidenced by scanning electron microscope (SEM) and atomic force microscope (AFM) images, Raman spectra, and various electrical characterizations. We also performed a theoretical multiscale simulation from continuum to atomic level to compare the mechanical stresses caused by the R2R and the hot-pressing methods, which also supports our conclusion. Consequently, we believe that the proposed hot-pressing method will be immediately useful for display and solar cell applications that currently require rigid and large substrates.
通过化学气相沉积(CVD)方法在金属衬底上生长的石墨烯薄膜,必须安全地转移到所需的衬底上,以用于进一步的应用。最近,已经开发出了一种用于大面积转移的卷对卷(R2R)方法,对于柔性目标衬底来说,这种方法特别有效。然而,对于玻璃或晶圆等刚性衬底,基于卷的方法在转移过程中会对石墨烯薄膜产生相当大的机械损伤,导致其电性能下降。在这里,我们介绍了一种基于热压法的改进的干法转移技术,该技术可以通过中和机械应力来最小化石墨烯的损伤。因此,我们通过扫描电子显微镜(SEM)和原子力显微镜(AFM)图像、拉曼光谱和各种电学特性,提高了大面积石墨烯薄膜在任意厚度和刚性衬底上的转移效率。我们还进行了从连续体到原子水平的理论多尺度模拟,以比较 R2R 和热压方法引起的机械应力,这也支持了我们的结论。因此,我们相信,所提出的热压方法将立即适用于目前需要刚性和大面积衬底的显示和太阳能电池应用。