Yang Jie, Zhang Mingling, Lan Xu, Weng Xiaokang, Shu Qijiang, Wang Rongfei, Qiu Feng, Wang Chong, Yang Yu
International Joint Research Center of China for Optoelectronic and Energy Materials, School of Materials Science and Engineering, Yunnan University, Kunming, 650091, China.
Institute of Optoelectronic Information Materials, School of Energy Research, Yunnan University, Cuihu North Road 2, Kunming, 650091, Yunnan Province, China.
Nanoscale Res Lett. 2018 Jun 11;13(1):177. doi: 10.1186/s11671-018-2586-2.
Polystyrene (PS) nanoparticle films with non-close-packed arrays were prepared by using ion beam etching technology. The effects of etching time, beam current, and voltage on the size reduction of PS particles were well investigated. A slow etching rate, about 9.2 nm/min, is obtained for the nanospheres with the diameter of 100 nm. The rate does not maintain constant with increasing the etching time. This may result from the thermal energy accumulated gradually in a long-time bombardment of ion beam. The etching rate increases nonlinearly with the increase of beam current, while it increases firstly then reach its saturation with the increase of beam voltage. The diameter of PS nanoparticles can be controlled in the range from 34 to 88 nm. Based on the non-close-packed arrays of PS nanoparticles, the ordered silicon (Si) nanopillars with their average diameter of 54 nm are fabricated by employing metal-assisted chemical etching technique. Our results pave an effective way to fabricate the ordered nanostructures with the size less than 100 nm.
采用离子束蚀刻技术制备了具有非紧密堆积阵列的聚苯乙烯（PS）纳米颗粒薄膜。深入研究了蚀刻时间、束流和电压对PS颗粒尺寸减小的影响。对于直径为100 nm的纳米球，获得了约9.2 nm/min的缓慢蚀刻速率。随着蚀刻时间的增加，该速率并不保持恒定。这可能是由于在离子束的长时间轰击下逐渐积累的热能所致。蚀刻速率随束流的增加而非线性增加，而随束电压的增加先增加然后达到饱和。PS纳米颗粒的直径可控制在34至88 nm范围内。基于PS纳米颗粒的非紧密堆积阵列，采用金属辅助化学蚀刻技术制备了平均直径为54 nm的有序硅（Si）纳米柱。我们的结果为制备尺寸小于100 nm的有序纳米结构铺平了一条有效途径。
