Sood Adam W, Poxson David J, Mont Frank W, Chhajed Sameer, Cho Jaehee, Schubert E Fred, Welser Roger E, Dhar Nibir K, Sood Ashok K
Department of Electrical, Computer and Systems Engineering, and Rensselaer Nanotechnology Center, Rensselaer Polytechnic Institute, Troy, NY 12180, USA.
J Nanosci Nanotechnol. 2012 May;12(5):3950-3. doi: 10.1166/jnn.2012.6181.
Oblique-angle deposition of indium tin oxide (ITO) is used to fabricate optical thin-film coatings with a porous, columnar nanostructure. Indium tin oxide is a material that is widely used in industrial applications because it is both optically transparent and electrically conductive. The ITO coatings are fabricated, using electron-beam evaporation, with a range of deposition angles between 0 degrees (normal incidence) and 80 degrees. As the deposition angle increases, we find that the porosity of the ITO film increases and the refractive index decreases. We measure the resistivity of the ITO film at each deposition angle, and find that as the porosity increases, the resistivity increases superlinearly. A new theoretical model is presented to describe the relationship between the ITO film's resistivity and its porosity. The model takes into account the columnar structure of the film, and agrees very well with the experimental data.
采用铟锡氧化物（ITO）的斜角沉积法来制备具有多孔柱状纳米结构的光学薄膜涂层。铟锡氧化物是一种在工业应用中广泛使用的材料，因为它既具有光学透明性又具有导电性。使用电子束蒸发法制备ITO涂层，沉积角度范围在0度（垂直入射）至80度之间。随着沉积角度的增加，我们发现ITO薄膜的孔隙率增加而折射率降低。我们测量了每个沉积角度下ITO薄膜的电阻率，发现随着孔隙率的增加，电阻率超线性增加。提出了一种新的理论模型来描述ITO薄膜的电阻率与其孔隙率之间的关系。该模型考虑了薄膜的柱状结构，并且与实验数据非常吻合。
