Departamento de Física Aplicada, Universidad Autónoma de Madrid, Avda, Francisco Tomás y Valiente 7, Cantoblanco, Madrid, 28049, Spain.
Nanoscale Res Lett. 2012 Aug 9;7(1):449. doi: 10.1186/1556-276X-7-449.
A novel fabrication method of Si photonic slabs based on the selective formation of porous silicon is reported. Free-standing square lattices of cylindrical air holes embedded in a Si matrix can be achieved by proton beam irradiation followed by electrochemical etching of Si wafers. The photonic band structures of these slabs show several gaps for the two symmetry directions for reflection through the z-plane. The flexibility of the fabrication method for tuning the frequency range of the gaps over the near- and mid-infrared ranges is demonstrated. This tunability can be achieved by simply adjusting the main parameters in the fabrication process such as the proton beam line spacing, proton fluence, or anodization current density. Thus, the reported method opens a promising route towards the fabrication of Si-based photonic slabs, with high flexibility and compatible with the current microelectronics industry.
本文报道了一种基于选择性形成多孔硅的硅光子平板的新型制造方法。通过质子束辐照和随后对硅片进行电化学腐蚀，可以得到嵌入在硅基质中的圆柱形空气孔的独立正方形晶格。这些平板的光子带结构在 z 平面的两个对称方向上显示出几个反射隙。通过简单地调整制造过程中的主要参数，例如质子束线间距、质子通量或阳极氧化电流密度，可以证明这种制造方法在近红外和中红外范围内调节隙的频率范围的灵活性。因此，所报道的方法为制造具有高灵活性且与当前微电子工业兼容的基于硅的光子平板开辟了一条有前途的途径。
