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通过碳同位素标记研究 Cu 上的 adlayer 石墨烯的生长。

Growth of adlayer graphene on Cu studied by carbon isotope labeling.

机构信息

Department of Physics, Laboratory of Nanoscale Condense Matter Physics, Xiamen University, Xiamen, China 361005.

出版信息

Nano Lett. 2013 Feb 13;13(2):486-90. doi: 10.1021/nl303879k. Epub 2013 Jan 4.

Abstract

The growth of bilayer and multilayer graphene on copper foils was studied by isotopic labeling of the methane precursor. Isotope-labeled graphene films were characterized by micro-Raman mapping and time-of-flight secondary ion mass spectrometry. Our investigation shows that during growth at high temperature, the adlayers formed simultaneously and beneath the top, continuous layer of graphene and the Cu substrate. Additionally, the adlayers share the same nucleation center and all adlayers nucleating in one place have the same edge termination. These results suggest that adlayer growth proceeds by catalytic decomposition of methane (or CH(x), x < 4) trapped in a "nano-chemical vapor deposition" chamber between the first layer and the substrate. On the basis of these results, submillimeter bilayer graphene was synthesized by applying a much lower growth rate.

摘要

通过对甲烷前体进行同位素标记,研究了双层和多层石墨烯在铜箔上的生长。同位素标记的石墨烯薄膜通过微拉曼映射和飞行时间二次离子质谱进行了表征。我们的研究表明,在高温生长过程中,吸附层在顶部连续的石墨烯层和 Cu 衬底的同时形成。此外,吸附层共享相同的成核中心,在一个地方成核的所有吸附层都具有相同的边缘终止。这些结果表明,吸附层的生长是通过在第一层和衬底之间的“纳米化学气相沉积”室中捕获的甲烷(或 CH(x),x < 4)的催化分解进行的。基于这些结果,通过施加更低的生长速率合成了亚毫米级双层石墨烯。

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