Max Planck Institute for the Science of Light Physics department Günther-Scharowsky-St, 1, Erlangen, 91058, Germany.
Nanoscale Res Lett. 2013 Jan 21;8(1):41. doi: 10.1186/1556-276X-8-41.
Oxidation of silicon nanowires (Si NWs) is an undesirable phenomenon that has a detrimental effect on their electronic properties. To prevent oxidation of Si NWs, a deeper understanding of the oxidation reaction kinetics is necessary. In the current work, we study the oxidation kinetics of hydrogen-terminated Si NWs (H-Si NWs) as the starting surfaces for molecular functionalization of Si surfaces. H-Si NWs of 85-nm average diameter were annealed at various temperatures from 50°C to 400°C, in short-time spans ranging from 5 to 60 min. At high temperatures (T ≥ 200°C), oxidation was found to be dominated by the oxide growth site formation (made up of silicon suboxides) and subsequent silicon oxide self-limitation. Si-Si backbond oxidation and Si-H surface bond propagation dominated the process at lower temperatures (T < 200°C).
硅纳米线（SiNWs）的氧化是一种不理想的现象，会对其电子性质产生有害影响。为了防止 SiNWs 的氧化，需要更深入地了解氧化反应动力学。在当前的工作中，我们研究了氢终止的 SiNWs（H-SiNWs）的氧化动力学，因为 H-SiNWs 是 Si 表面分子功能化的起始表面。85nm 平均直径的 H-SiNWs 在 50°C 至 400°C 的不同温度下进行退火，时间跨度从 5 分钟到 60 分钟不等。在高温（T≥200°C）下，氧化过程主要由氧化物生长位形成（由硅亚氧化物组成）和随后的硅氧化物自限制主导。在较低温度（T<200°C）下，Si-Si 背键氧化和 Si-H 表面键扩展主导了这个过程。
