Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
Adv Mater. 2013 Jul 19;25(27):3639-44. doi: 10.1002/adma.201300941. Epub 2013 Apr 25.
Low-operating-voltage flexible organic thin-film transistors with high thermal stability using DPh-DNTT and SAM gate dielectrics are reported. The mobility of the transistors are decreased by 23% after heating to 250 °C for 30 min. Furthermore, flexible organic pseudo-CMOS inverter circuits, which are functional after heating to 200 °C, are demonstrated.
使用 DPh-DNTT 和 SAM 栅介质的低工作电压、高热稳定性柔性有机薄膜晶体管被报道。晶体管的迁移率在 250°C 加热 30 分钟后下降了 23%。此外，还展示了加热到 200°C 后仍能正常工作的柔性有机伪 CMOS 逆变器电路。
