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本文引用的文献

1
Directly addressable sub-3 nm gold nanogaps fabricated by Nanoskiving using self-assembled monolayers as templates.采用自组装单分子层作为模板的纳米刻蚀技术直接制备的亚 3nm 金纳米间隙。
ACS Nano. 2012 Jun 26;6(6):5566-73. doi: 10.1021/nn301510x. Epub 2012 May 23.
2
Use of thin sectioning (nanoskiving) to fabricate nanostructures for electronic and optical applications.使用薄切片(纳米切割)来制造用于电子和光学应用的纳米结构。
Angew Chem Int Ed Engl. 2011 Sep 5;50(37):8566-83. doi: 10.1002/anie.201101024. Epub 2011 Jul 13.
3
Odd-even effects in charge transport across self-assembled monolayers.自组装单分子层中电荷输运的奇偶效应。
J Am Chem Soc. 2011 Mar 9;133(9):2962-75. doi: 10.1021/ja1090436. Epub 2011 Feb 16.
4
Systematic cross-linking changes within a self-assembled monolayer in a nanogap junction: a tool for investigating the intermolecular electronic coupling.在纳米间隙结中自组装单层内的系统交联变化:研究分子间电子耦合的工具。
J Am Chem Soc. 2010 Feb 17;132(6):1774-5. doi: 10.1021/ja910126s.
5
Integrated fabrication and magnetic positioning of metallic and polymeric nanowires embedded in thin epoxy slabs.在薄环氧树脂板中嵌入的金属和聚合物纳米线的集成制造和磁性定位。
ACS Nano. 2009 Oct 27;3(10):3315-25. doi: 10.1021/nn901002q.
6
Fabrication of complex metallic nanostructures by nanoskiving.通过纳米切片法制备复杂金属纳米结构
ACS Nano. 2007 Oct;1(3):215-27. doi: 10.1021/nn700172c.
7
Nanoskiving: a new method to produce arrays of nanostructures.纳米切片:一种制备纳米结构阵列的新方法。
Acc Chem Res. 2008 Dec;41(12):1566-77. doi: 10.1021/ar700194y.
8
Influence of defects on the electrical characteristics of mercury-drop junctions: self-assembled monolayers of n-alkanethiolates on rough and smooth silver.缺陷对汞滴结电学特性的影响:正烷硫醇盐在粗糙和平滑银表面的自组装单分子层
J Am Chem Soc. 2007 Apr 11;129(14):4336-49. doi: 10.1021/ja0677261. Epub 2007 Mar 15.
9
On-wire lithography.在线光刻技术
Science. 2005 Jul 1;309(5731):113-5. doi: 10.1126/science.1112666.
10
Mechanism of electron conduction in self-assembled alkanethiol monolayer devices.自组装烷硫醇单分子层器件中的电子传导机制。
Ann N Y Acad Sci. 2003 Dec;1006:21-35. doi: 10.1196/annals.1292.001.

通过纳米削薄制造纳米间隙。

Fabricating nanogaps by nanoskiving.

作者信息

Pourhossein Parisa, Chiechi Ryan C

机构信息

Stratingh Institute for Chemistry and Zernike Institute for Advanced Materials, University of Groningen.

出版信息

J Vis Exp. 2013 May 13(75):e50406. doi: 10.3791/50406.

DOI:10.3791/50406
PMID:23711512
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3683935/
Abstract

There are several methods of fabricating nanogaps with controlled spacings, but the precise control over the sub-nanometer spacing between two electrodes-and generating them in practical quantities-is still challenging. The preparation of nanogap electrodes using nanoskiving, which is a form of edge lithography, is a fast, simple and powerful technique. This method is an entirely mechanical process which does not include any photo- or electron-beam lithographic steps and does not require any special equipment or infrastructure such as clean rooms. Nanoskiving is used to fabricate electrically addressable nanogaps with control over all three dimensions; the smallest dimension of these structures is defined by the thickness of the sacrificial layer (Al or Ag) or self-assembled monolayers. These wires can be manually positioned by transporting them on drops of water and are directly electrically-addressable; no further lithography is required to connect them to an electrometer.

摘要

制造具有可控间距的纳米间隙有多种方法,但精确控制两个电极之间亚纳米级的间距并实现大量生产仍具有挑战性。使用纳米刻削制备纳米间隙电极是一种快速、简单且强大的技术,纳米刻削是边缘光刻的一种形式。该方法是一个完全机械的过程,不包括任何光刻或电子束光刻步骤,也不需要任何特殊设备或基础设施,如洁净室。纳米刻削用于制造在所有三个维度上都可控的电寻址纳米间隙;这些结构的最小尺寸由牺牲层(铝或银)或自组装单分子层的厚度决定。这些导线可以通过在水滴上运输进行手动定位,并且可以直接进行电寻址;无需进一步光刻即可将它们连接到静电计。