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通过纳米削薄制造纳米间隙。

Fabricating nanogaps by nanoskiving.

作者信息

Pourhossein Parisa, Chiechi Ryan C

机构信息

Stratingh Institute for Chemistry and Zernike Institute for Advanced Materials, University of Groningen.

出版信息

J Vis Exp. 2013 May 13(75):e50406. doi: 10.3791/50406.

Abstract

There are several methods of fabricating nanogaps with controlled spacings, but the precise control over the sub-nanometer spacing between two electrodes-and generating them in practical quantities-is still challenging. The preparation of nanogap electrodes using nanoskiving, which is a form of edge lithography, is a fast, simple and powerful technique. This method is an entirely mechanical process which does not include any photo- or electron-beam lithographic steps and does not require any special equipment or infrastructure such as clean rooms. Nanoskiving is used to fabricate electrically addressable nanogaps with control over all three dimensions; the smallest dimension of these structures is defined by the thickness of the sacrificial layer (Al or Ag) or self-assembled monolayers. These wires can be manually positioned by transporting them on drops of water and are directly electrically-addressable; no further lithography is required to connect them to an electrometer.

摘要

制造具有可控间距的纳米间隙有多种方法,但精确控制两个电极之间亚纳米级的间距并实现大量生产仍具有挑战性。使用纳米刻削制备纳米间隙电极是一种快速、简单且强大的技术,纳米刻削是边缘光刻的一种形式。该方法是一个完全机械的过程,不包括任何光刻或电子束光刻步骤,也不需要任何特殊设备或基础设施,如洁净室。纳米刻削用于制造在所有三个维度上都可控的电寻址纳米间隙;这些结构的最小尺寸由牺牲层(铝或银)或自组装单分子层的厚度决定。这些导线可以通过在水滴上运输进行手动定位,并且可以直接进行电寻址;无需进一步光刻即可将它们连接到静电计。

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本文引用的文献

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Odd-even effects in charge transport across self-assembled monolayers.自组装单分子层中电荷输运的奇偶效应。
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