NCRI, Center for Smart Molecular Memory, Department of Energy Science, Department of Chemistry, Sungkyunkwan University, Suwon, Republic of Korea.
Adv Mater. 2013 Aug 27;25(32):4437-44. doi: 10.1002/adma.201301230. Epub 2013 Jun 21.
An anti-solvent for graphene oxide (GO), hexane, is introduced to increase the surface area and the pore volume of the non-stacked GO/reduced GO 3D structure and allows the formation of a highly crumpled non-stacked GO powder, which clearly shows ideal supercapacitor behavior.
引入氧化石墨烯(GO)的反溶剂正己烷来增加未堆叠 GO/还原 GO 3D 结构的表面积和孔体积,并允许形成高度褶皱的未堆叠 GO 粉末,这清楚地显示出理想的超级电容器行为。