Mondal Sandip, Venkataraman V
Department of Physics, Indian Institute of Science, Bangalore, 560012, India.
SanDisk (Western Digital Corporation) India Device Design Center, Bangalore, 560103, India.
Nat Commun. 2019 May 13;10(1):2143. doi: 10.1038/s41467-019-10142-y.
Intrinsic charge trap capacitive non-volatile flash memories take a significant share of the semiconductor electronics market today. It is challenging to create intrinsic traps in the dielectric layer without high temperature processing steps. The main issue is to optimize the leakage current and intrinsic trap density simultaneously. Moreover, conventional memory devices need the support of tunneling and blocking layers since the charge trapping dielectric layer is incapable of preventing the memory leakage. Here we report a tunable flash memory device without tunneling and blocking layer by combining the discovery of high intrinsic charge traps of more than 10 cm, together with low leakage current of less than 10 A cm in solution derived, inorganic, spin-coated dielectric films which were heated at 200 °C or below. In addition, the memory storage capacity is tuned systematically upto 96% by controlling the trap density with increasing heating temperature.
本征电荷陷阱电容式非易失性闪存如今在半导体电子市场中占据重要份额。在不经过高温处理步骤的情况下，在介电层中创建本征陷阱具有挑战性。主要问题是要同时优化漏电流和本征陷阱密度。此外，传统的存储器件需要隧穿层和阻挡层的支持，因为电荷俘获介电层无法防止存储器漏电。在此，我们报告了一种无需隧穿层和阻挡层的可调闪存器件，该器件通过结合以下特性实现：在溶液衍生的无机旋涂介电薄膜中发现了超过(10^{12}) (cm^{-3})的高本征电荷陷阱，以及在(200^{\circ}C)或更低温度下加热时小于(10^{-10}) (A) (cm^{-2})的低漏电流。此外，通过随着加热温度升高控制陷阱密度，存储器存储容量可系统地调节至(96%)。
