Kalashnikov Dmitry A, Alagappan Gandhi, Hu Ting, Lim Nelson, Leong Victor, Png Ching Eng, Krivitsky Leonid A
Institute of Materials Research and Engineering, Agency for Science, Technology, and Research (A*STAR), 2 Fusionopolis Way, #08-03 Innovis, Singapore, 138634, Singapore.
Institute of High Performance Computing, Agency for Science, Technology, and Research (A*STAR), Fusionopolis, 1 Fusionopolis Way, #16-16 Connexis, Singapore, 138632, Singapore.
Sci Rep. 2022 Sep 5;12(1):15074. doi: 10.1038/s41598-022-19255-9.
Integration of single-photon emitters (SPEs) with resonant photonic structures is a promising approach for realizing compact and efficient single-photon sources for quantum communications, computing, and sensing. Efficient interaction between the SPE and the photonic cavity requires that the cavity's resonance matches the SPE's emission line. Here we demonstrate a new method for tuning silicon nitride (SiN) microring cavities via controlled deposition of the cladding layers. Guided by numerical simulations, we deposit silicon dioxide (SiO) nanolayers onto SiN ridge structures in steps of 50 nm. We show tuning of the cavity resonance exceeding a free spectral range (FSR) of 3.5 nm without degradation of the quality-factor (Q-factor) of the cavity. We then complement this method with localized laser heating for fine-tuning of the cavity. Finally, we verify that the cladding deposition does not alter the position and spectral properties of nanoparticles placed on the cavity, which suggests that our method can be useful for integrating SPEs with photonic structures.
将单光子发射器（SPE）与谐振光子结构集成是实现用于量子通信、计算和传感的紧凑高效单光子源的一种很有前景的方法。SPE与光子腔之间的有效相互作用要求腔的共振与SPE的发射线相匹配。在此，我们展示了一种通过控制包层沉积来调谐氮化硅（SiN）微环腔的新方法。在数值模拟的指导下，我们以50纳米的步长将二氧化硅（SiO）纳米层沉积到SiN脊结构上。我们展示了腔共振的调谐范围超过3.5纳米的自由光谱范围（FSR），而不会降低腔的品质因数（Q因子）。然后，我们用局部激光加热对该方法进行补充，以对腔进行微调。最后，我们验证了包层沉积不会改变放置在腔上的纳米颗粒的位置和光谱特性，这表明我们的方法可用于将SPE与光子结构集成。
