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基于交叉点电阻式存储器阵列的一步回归与分类

One-step regression and classification with cross-point resistive memory arrays.

作者信息

Sun Zhong, Pedretti Giacomo, Bricalli Alessandro, Ielmini Daniele

机构信息

Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano and IU.NET, Piazza L. da Vinci 32, 20133 Milano, Italy.

出版信息

Sci Adv. 2020 Jan 31;6(5):eaay2378. doi: 10.1126/sciadv.aay2378. eCollection 2020 Jan.

DOI:10.1126/sciadv.aay2378
PMID:32064342
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6994204/
Abstract

Machine learning has been getting attention in recent years as a tool to process big data generated by the ubiquitous sensors used in daily life. High-speed, low-energy computing machines are in demand to enable real-time artificial intelligence processing of such data. These requirements challenge the current metal-oxide-semiconductor technology, which is limited by Moore's law approaching its end and the communication bottleneck in conventional computing architecture. Novel computing concepts, architectures, and devices are thus strongly needed to accelerate data-intensive applications. Here, we show that a cross-point resistive memory circuit with feedback configuration can train traditional machine learning algorithms such as linear regression and logistic regression in just one step by computing the pseudoinverse matrix of the data within the memory. One-step learning is further supported by simulations of the prediction of housing price in Boston and the training of a two-layer neural network for MNIST digit recognition.

摘要

近年来,机器学习作为一种处理日常生活中无处不在的传感器所产生的大数据的工具而备受关注。需要高速、低能耗的计算机器来实现对此类数据的实时人工智能处理。这些需求对当前的金属氧化物半导体技术构成了挑战,该技术受到摩尔定律接近极限以及传统计算架构中通信瓶颈的限制。因此,迫切需要新颖的计算概念、架构和设备来加速数据密集型应用。在此,我们表明,具有反馈配置的交叉点电阻式存储电路可以通过计算存储器内数据的伪逆矩阵,在一步之内训练传统的机器学习算法,如线性回归和逻辑回归。对波士顿房价预测的模拟以及用于MNIST数字识别的两层神经网络的训练进一步支持了一步学习。

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本文引用的文献

1
Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing.离子浮栅存储器阵列的并行编程可实现可扩展的神经形态计算。
Science. 2019 May 10;364(6440):570-574. doi: 10.1126/science.aaw5581. Epub 2019 Apr 25.
2
Solving matrix equations in one step with cross-point resistive arrays.使用交叉点电阻阵列一步求解矩阵方程。
Proc Natl Acad Sci U S A. 2019 Mar 5;116(10):4123-4128. doi: 10.1073/pnas.1815682116. Epub 2019 Feb 19.
3
Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices.
Front Optoelectron. 2022 May 12;15(1):23. doi: 10.1007/s12200-022-00025-4.
4
Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS.基于单层二硫化钼的低功耗人工神经网络感知器
ACS Nano. 2022 Mar 22;16(3):3684-3694. doi: 10.1021/acsnano.1c07065. Epub 2022 Feb 15.
5
Multimodal transistors as ReLU activation functions in physical neural network classifiers.多模态晶体管作为物理神经网络分类器中的 ReLU 激活函数。
Sci Rep. 2022 Jan 13;12(1):670. doi: 10.1038/s41598-021-04614-9.
6
Neurohybrid Memristive CMOS-Integrated Systems for Biosensors and Neuroprosthetics.用于生物传感器和神经假体的神经混合忆阻式CMOS集成系统。
Front Neurosci. 2020 Apr 28;14:358. doi: 10.3389/fnins.2020.00358. eCollection 2020.
7
Memristive and CMOS Devices for Neuromorphic Computing.用于神经形态计算的忆阻器件和互补金属氧化物半导体器件
Materials (Basel). 2020 Jan 1;13(1):166. doi: 10.3390/ma13010166.
氧化物和电极材料对氧化物电阻式随机存取存储器(ReRAM)器件开关特性的影响。
Faraday Discuss. 2019 Feb 18;213(0):87-98. doi: 10.1039/c8fd00106e.
4
Logic Computing with Stateful Neural Networks of Resistive Switches.基于阻变开关的有状态神经网络的逻辑计算。
Adv Mater. 2018 Sep;30(38):e1802554. doi: 10.1002/adma.201802554. Epub 2018 Aug 5.
5
Silicon Oxide (SiO ): A Promising Material for Resistance Switching?氧化硅 (SiO2):电阻开关的理想材料?
Adv Mater. 2018 Oct;30(43):e1801187. doi: 10.1002/adma.201801187. Epub 2018 Jun 29.
6
Equivalent-accuracy accelerated neural-network training using analogue memory.利用模拟内存实现等效精度的加速神经网络训练。
Nature. 2018 Jun;558(7708):60-67. doi: 10.1038/s41586-018-0180-5. Epub 2018 Jun 6.
7
A novel true random number generator based on a stochastic diffusive memristor.一种基于随机扩散忆阻器的新型真随机数发生器。
Nat Commun. 2017 Oct 12;8(1):882. doi: 10.1038/s41467-017-00869-x.
8
Memristive neural network for on-line learning and tracking with brain-inspired spike timing dependent plasticity.基于神经启发的尖峰时间依赖可塑性的忆阻神经网络的在线学习和跟踪。
Sci Rep. 2017 Jul 13;7(1):5288. doi: 10.1038/s41598-017-05480-0.
9
Sparse coding with memristor networks.基于忆阻器网络的稀疏编码
Nat Nanotechnol. 2017 Aug;12(8):784-789. doi: 10.1038/nnano.2017.83. Epub 2017 May 22.
10
A Synaptic Transistor based on Quasi-2D Molybdenum Oxide.基于准二维氧化钼的突触晶体管。
Adv Mater. 2017 Jul;29(27). doi: 10.1002/adma.201700906. Epub 2017 May 9.