Georgiou Thanasis, Yang Huafeng, Jalil Rashid, Chapman James, Novoselov Kostya S, Mishchenko Artem
School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, UK.
Dalton Trans. 2014 Jul 21;43(27):10388-91. doi: 10.1039/c3dt52353e. Epub 2013 Oct 7.
Atomically thin layers of materials, which are just a few atoms in thickness, present an attractive option for future electronic devices. Herein we characterize, optically and electronically, atomically thin tungsten disulphide (WS2), a layered semiconductor. We provide the distinctive Raman and photoluminescence signatures for single layers, and prepare field-effect transistors where atomically thin WS2 serves as the conductive channel. The transistors present mobilities μ = 10 cm(2) V(-1) s(-1) and exhibit ON/OFF ratios exceeding 100,000. Our results show that WS2 is an attractive option for applications in electronic and optoelectronic devices and pave the way for further studies in this two-dimensional material.
厚度仅为几个原子的原子级薄材料层，是未来电子设备的一个有吸引力的选择。在此，我们对层状半导体原子级薄的二硫化钨（WS2）进行了光学和电学表征。我们给出了单层的独特拉曼光谱和光致发光特征，并制备了以原子级薄的WS2作为导电沟道的场效应晶体管。这些晶体管的迁移率μ = 10 cm² V⁻¹ s⁻¹，开/关比超过100,000。我们的结果表明，WS2是电子和光电器件应用的一个有吸引力的选择，并为这种二维材料的进一步研究铺平了道路。
