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基于原位硬掩模嵌段共聚物方法制备有序、大规模、水平排列的硅纳米线阵列。

Fabrication of ordered, large scale, horizontally-aligned si nanowire arrays based on an in situ hard mask block copolymer approach.

机构信息

Materials Research Group, Department of Chemistry and Tyndall National Institute, University College Cork, Cork, Ireland 2 Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin, Ireland.

出版信息

Adv Mater. 2014 Feb 26;26(8):1207-16. doi: 10.1002/adma.201304096. Epub 2013 Nov 26.

DOI:10.1002/adma.201304096
PMID:24277486
Abstract

A simple technique is demonstrated to fabricate horizontal, uniform, and hexagonally arranged Sinanowire arrays with controlled orientation and density at spatially well defined locations on a substrate based on an in situ hard-mask pattern-formation approach by microphase-separated block-copolymer thin films. The technique may have significant application in the manufacture of transistor circuitry.

摘要

一种简单的技术被展示出来,该技术基于微相分离嵌段共聚物薄膜的原位硬掩模图案形成方法,在基底上的空间上确定位置上制造具有受控取向和密度的水平、均匀且六边形排列的硅纳米线阵列。该技术在晶体管电路制造中可能具有重要的应用。

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