Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China.
Adv Mater. 2014 Mar 19;26(11):1776-81. doi: 10.1002/adma.201304301. Epub 2013 Dec 5.
A facile and scalable co-segregation method is used to grow hexagonal boron nitride (h-BN) thin films from B- and N-containing metals. By annealing the sandwiched metal substrates in vacuum, sub-monolayer h-BN flakes, monolayer h-BN films, and multilayer h-BN thin films of varying thickness are successfully prepared. This approach follows an underneath-growth mode and exhibits good thickness- and location-control.
一种简便且可扩展的共析出方法用于从含 B 和 N 的金属中生长六方氮化硼（h-BN）薄膜。通过在真空中退火夹心金属衬底，可以成功制备亚单层 h-BN 薄片、单层 h-BN 薄膜和不同厚度的多层 h-BN 薄膜。这种方法遵循底部生长模式，并表现出良好的厚度和位置控制。
