Lee Seung Hee, Jeong Hokyeong, Okello Odongo Francis Ngome, Xiao Shiyu, Moon Seokho, Kim Dong Yeong, Kim Gi-Yeop, Lo Jen-Iu, Peng Yu-Chain, Cheng Bing-Ming, Miyake Hideto, Choi Si-Young, Kim Jong Kyu
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea.
Graduate School of Regional Innovation Studies, Mie University, Tsu, 514-8507, Japan.
Sci Rep. 2019 Jul 22;9(1):10590. doi: 10.1038/s41598-019-47093-9.
Remarkable improvements in both structural and optical properties of wafer-scale hexagonal boron nitride (h-BN) films grown by metal-organic chemical vapor deposition (MOCVD) enabled by high-temperature post-growth annealing is presented. The enhanced crystallinity and homogeneity of the MOCVD-grown h-BN films grown at 1050 °C is attributed to the solid-state atomic rearrangement during the thermal annealing at 1600 °C. In addition, the appearance of the photoluminescence by excitonic transitions as well as enlarged optical band gap were observed for the post-annealed h-BN films as direct consequences of the microstructural improvement. The post-growth annealing is a very promising strategy to overcome limited crystallinity of h-BN films grown by typical MOCVD systems while maintaining their advantage of multiple wafer scalability for practical applications towards two-dimensional electronics and optoelectronics.
本文介绍了通过高温生长后退火实现的金属有机化学气相沉积（MOCVD）生长的晶圆级六方氮化硼（h-BN）薄膜在结构和光学性能方面的显著改善。在1050°C下生长的MOCVD生长的h-BN薄膜的结晶度和均匀性增强，这归因于在1600°C热退火期间的固态原子重排。此外，退火后的h-BN薄膜观察到激子跃迁引起的光致发光以及光学带隙扩大，这是微观结构改善的直接结果。生长后退火是一种非常有前景的策略，可克服典型MOCVD系统生长的h-BN薄膜结晶度有限的问题，同时保持其在二维电子学和光电子学实际应用中的多晶圆可扩展性优势。
