Yang Yufei, Peng Yi, Saleem Muhammad Farooq, Chen Ziqian, Sun Wenhong
Research Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning 530004, China.
GBA Branch of Aerospace Information Research Institute, Chinese Academy of Sciences, Guangzhou 510700, China.
Materials (Basel). 2022 Jun 22;15(13):4396. doi: 10.3390/ma15134396.
Since the successful separation of graphene from its bulk counterpart, two-dimensional (2D) layered materials have become the focus of research for their exceptional properties. The layered hexagonal boron nitride (h-BN), for instance, offers good lubricity, electrical insulation, corrosion resistance, and chemical stability. In recent years, the wide-band-gap layered h-BN has been recognized for its broad application prospects in neutron detection and quantum information processing. In addition, it has become very important in the field of 2D crystals and van der Waals heterostructures due to its versatility as a substrate, encapsulation layer, and a tunneling barrier layer for various device applications. However, due to the poor adhesion between h-BN and substrate and its high preparation temperature, it is very difficult to prepare large-area and denseh-BN films. Therefore, the controllable synthesis of h-BN films has been the focus of research in recent years. In this paper, the preparation methods and applications of h-BN films on III-V compounds are systematically summarized, and the prospects are discussed.
自从石墨烯与其体相材料成功分离以来，二维（2D）层状材料因其优异的性能成为研究热点。例如，层状六方氮化硼（h-BN）具有良好的润滑性、电绝缘性、耐腐蚀性和化学稳定性。近年来，宽带隙层状h-BN因其在中子探测和量子信息处理方面的广阔应用前景而受到认可。此外，由于它作为各种器件应用的衬底、封装层和隧穿势垒层具有多功能性，在二维晶体和范德华异质结构领域变得非常重要。然而，由于h-BN与衬底之间的附着力差以及其制备温度高，制备大面积且致密的h-BN薄膜非常困难。因此，h-BN薄膜的可控合成一直是近年来的研究重点。本文系统总结了III-V族化合物上h-BN薄膜的制备方法及应用，并对其前景进行了讨论。
