Hamd W, Chavarot-Kerlidou M, Fize J, Muller G, Leyris A, Matheron M, Courtin E, Fontecave M, Sanchez C, Artero V, Laberty-Robert C
Laboratoire de Chimie de la Matière Condensée de Paris-UMR7574, CNRS, Université Paris 6, Collège de France, 11 place Marcelin Berthelot 75005 Paris.
Laboratoire de Chimie et Biologie des Métaux, Université Grenoble 1, CNRS, CEA, 17 rue des Martyrs 38054 Grenoble cedex 9.
J Mater Chem A Mater. 2013;1(28):8217-25. doi: 10.1039/C3TA10728K.
A simple route towards nanostructured mesoporous Indium-Tin Oxide () electrodes exhibiting both high conductivities and optimized bicontinuous pore-solid network is reported. The ITO films are first produced as an X-ray-amorphous, high surface area material, by adapting recently established template-directed sol-gel methods using Sn(IV) and In(III) salts. Carefully controlled temperature/atmosphere treatments convert the as-synthesized ITO films into nano-crystalline coatings with the cubic bixbyite structure. Specially, a multi-layered synthesis was successfully undertaken for tuning the film thickness. In order to evaluate the performances of as an electrode substrate for photoelectrochemical applications, photoelectrodes were prepared by covalent grafting of a redox-active dye, the complex [Ru(bpy)(4,4'-(CHPOH)-bpy)]Cl (bpy=bipyridine). Surface coverage was shown to increase with the film thickness, from 0.7 × 10 mol.cm (one layer, 45 nm) to 3.5 × 10 mol.cm (ten layers, 470 nm), the latter value being ~ 100 times larger than that for commercially available planar ITO. In the presence of an electron mediator, photocurrents up to 50 μA.cm have been measured under visible light irradiation, demonstrating the potential of this new preparation for the construction of efficient photoelectrochemical devices.
报道了一种制备具有高电导率和优化双连续孔-固体网络的纳米结构介孔氧化铟锡（ITO）电极的简单方法。首先，通过采用最近建立的使用锡（IV）和铟（III）盐的模板导向溶胶-凝胶法，将ITO薄膜制备成具有高表面积的X射线非晶材料。通过精心控制温度/气氛处理，将合成后的ITO薄膜转化为具有立方铁锰矿结构的纳米晶涂层。特别地，成功进行了多层合成以调节薄膜厚度。为了评估ITO作为光电化学应用电极基板的性能，通过共价接枝氧化还原活性染料[Ru(bpy)₂(4,4'-(CH₂PO₃H)₂-bpy)]Cl（bpy = 联吡啶）制备了光电极。结果表明，表面覆盖率随薄膜厚度增加，从0.7×10⁻⁶ mol·cm⁻²（一层，45 nm）增加到3.5×10⁻⁵ mol·cm⁻²（十层，470 nm），后一个值比市售平面ITO的表面覆盖率大~100倍。在电子媒介体存在下，在可见光照射下测量到高达50 μA·cm⁻²的光电流，证明了这种新型ITO制备方法在构建高效光电化学器件方面的潜力。
