IK4-CIDETEC , Parque Tecnológico de San Sebastián, Paseo Miramón 196, Donostia-San Sebastián, Gipuzkoa 20009, Spain.
ACS Appl Mater Interfaces. 2014 Feb 26;6(4):2836-41. doi: 10.1021/am405416a. Epub 2014 Jan 27.
Sb2Se3 thin films are proposed as an alternative light harvester for semiconductor sensitized solar cells. An innovative electrodeposition route, based on aqueous alkaline electrolytes, is presented to obtain amorphous Sb2Se3. The amorphous to crystalline phase transition takes place during a soft thermal annealing in Ar atmosphere. The potential of the Sb2Se3 electrodeposited thin films in semiconductor sensitized solar cells is evaluated by preparing TiO2/Sb2Se3/CuSCN planar heterojunction solar cells. The resulting devices generate electricity from the visible and NIR photons, exhibiting the external quantum efficiency onset close to 1050 nm. Although planar architecture is not optimized in terms of charge carrier collection, photocurrent as high as 18 mA/cm(2), under simulated (AM1.5G) solar light, is achieved. Furthermore, the effect of the Sb2Se3 thickness and microstructural properties on the photocurrent is analyzed, suggesting the hole transport is the main limiting mechanism. The present findings provide significant insights to design efficient semiconductor sensitized solar cells based on advanced architectures (e.g., nanostructured and tandem), opening wide possibilities for progresses in this emerging photovoltaics technology.
Sb2Se3 薄膜被提议作为半导体敏化太阳能电池的替代光收集器。提出了一种基于碱性水溶液电解质的创新电沉积方法,以获得非晶态 Sb2Se3。非晶到晶相的转变发生在 Ar 气氛下的软热退火过程中。通过制备 TiO2/Sb2Se3/CuSCN 平面异质结太阳能电池来评估 Sb2Se3 电沉积薄膜在半导体敏化太阳能电池中的应用潜力。所得器件可以从可见光和近红外光子中产生电能,表现出接近 1050nm 的外量子效率起始值。尽管平面结构在载流子收集方面没有得到优化,但在模拟(AM1.5G)太阳光下,仍实现了高达 18mA/cm2 的光电流。此外,还分析了 Sb2Se3 厚度和微观结构特性对光电流的影响,表明空穴传输是主要的限制机制。本研究结果为基于先进结构(例如,纳米结构和串联结构)设计高效半导体敏化太阳能电池提供了重要的见解,为这一新兴光伏技术的发展提供了广泛的可能性。