IBM T. J. Watson Research Center, 1101 Kitchawan Rd., Yorktown Heights, New York 10598, USA.
Nat Commun. 2014;5:3086. doi: 10.1038/ncomms4086.
Graphene has attracted much interest as a future channel material in radio frequency electronics because of its superior electrical properties. Fabrication of a graphene integrated circuit without significantly degrading transistor performance has proven to be challenging, posing one of the major bottlenecks to compete with existing technologies. Here we present a fabrication method fully preserving graphene transistor quality, demonstrated with the implementation of a high-performance three-stage graphene integrated circuit. The circuit operates as a radio frequency receiver performing signal amplification, filtering and downconversion mixing. All circuit components are integrated into 0.6 mm(2) area and fabricated on 200 mm silicon wafers, showing the unprecedented graphene circuit complexity and silicon complementary metal-oxide-semiconductor process compatibility. The demonstrated circuit performance allow us to use graphene integrated circuit to perform practical wireless communication functions, receiving and restoring digital text transmitted on a 4.3-GHz carrier signal.
石墨烯因其卓越的电学性能而备受关注，有望成为射频电子学中的未来沟道材料。然而，在不显著降低晶体管性能的情况下制造石墨烯集成电路已被证明极具挑战性，这是与现有技术竞争的主要瓶颈之一。在这里，我们提出了一种完全保留石墨烯晶体管质量的制造方法，并通过实现高性能的三级石墨烯集成电路来证明这一方法。该电路作为射频接收器，执行信号放大、滤波和下变频混频。所有的电路元件都集成在 0.6 毫米(2)的面积内，并在 200 毫米硅片上制造，展示了前所未有的石墨烯电路复杂性和硅互补金属氧化物半导体工艺兼容性。所展示的电路性能使我们能够使用石墨烯集成电路来执行实际的无线通信功能，接收和恢复在 4.3-GHz 载波信号上传输的数字文本。
