Sberna Paolo M, Trifunovic Miki, Ishihara Ryoichi
Quantum Engineering Department, Delft University of Technology, Mekelweg 4, 2628 CD Delft, The Netherlands.
QuTech, Delft University of Technology, Mekelweg 4, 2628 CD Delft, The Netherlands.
ACS Sustain Chem Eng. 2017 Jul 3;5(7):5642-5645. doi: 10.1021/acssuschemeng.7b00626. Epub 2017 Jun 11.
Currently, research has been focusing on printing and laser crystallization of cyclosilanes, bringing to life polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with outstanding properties. However, the synthesis of these Si-based inks is generally complex and expensive. Here, we prove that a polysilane ink, obtained as a byproduct of silicon gases and derivatives, can be used successfully for the synthesis of poly-Si by laser annealing, at room temperature, and for n- and p-channel TFTs. The devices, fabricated according to CMOS compatible processes at 350 °C, showed field effect mobilities up to 8 and 2 cm/(V s) for n- and p-type TFTs, respectively. The presented method combines a low-cost coating technique with the usage of recycled material, opening a route to a convenient and sustainable production of large-area, flexible, and even disposable/single-use electronics.
目前，研究一直聚焦于环硅烷的印刷和激光结晶，从而制造出具有优异性能的多晶硅（poly-Si）薄膜晶体管（TFT）。然而，这些硅基油墨的合成通常复杂且昂贵。在此，我们证明，作为硅气体及其衍生物的副产物获得的聚硅烷油墨，可在室温下通过激光退火成功用于合成多晶硅，以及制造n沟道和p沟道TFT。按照350°C的CMOS兼容工艺制造的器件，n型和p型TFT的场效应迁移率分别高达8和2 cm/(V s)。所提出的方法将低成本涂层技术与回收材料的使用相结合，为大面积、柔性乃至一次性/单用途电子产品的便捷且可持续生产开辟了一条途径。
