通过衬底控制和离子辐照增强非晶硅薄膜的光吸收。

Enhanced light absorption of amorphous silicon thin film by substrate control and ion irradiation.

机构信息

Key Laboratory of Advanced Materials, School of Material Science and Engineering, Tsinghua University, Beijing 100084, China.

出版信息

Nanoscale Res Lett. 2014 Apr 9;9(1):173. doi: 10.1186/1556-276X-9-173. eCollection 2014.

DOI:10.1186/1556-276X-9-173

PMID:24717078

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3998514/

Abstract

UNLABELLED

Large-area periodically aligned silicon nanopillar (PASiNP) arrays were fabricated by magnetic sputtering with glancing angle deposition (GLAD) on substrates coated by a monolayer of close-packed polystyrene (PS) nanospheres. The structure of PASiNP arrays could be manipulated by changing the diameter of PS nanospheres. Enhanced light absorptance within a wavelength range from 300 to 1,000 nm was observed as the diameter of nanopillars and porosity of PASiNP arrays increased. Meanwhile, Xe ion irradiation with dose from 1 × 10(14) to 50 × 10(14) ions/cm(2) was employed to modify the surface morphology and top structure of thin films, and the effect of the irradiation on the optical bandgap was discussed.

PACS CODE

81.15.Cd; 78.66.Jg; 61.80.Jh.

摘要

无标签

大面积周期性排列的硅纳米柱 (PASiNP) 阵列通过磁溅射和掠角沉积 (GLAD) 在涂有单层密排聚苯乙烯 (PS) 纳米球的衬底上制备而成。通过改变 PS 纳米球的直径可以控制 PASiNP 阵列的结构。当纳米柱的直径和 PASiNP 阵列的孔隙率增加时，观察到在 300 到 1000nm 的波长范围内增强的光吸收率。同时，采用 Xe 离子辐照剂量从 1×10(14)到 50×10(14)离子/cm(2)来修饰薄膜的表面形貌和顶结构，并讨论了辐照对光学带隙的影响。

PACS 码：81.15.Cd; 78.66.Jg; 61.80.Jh.