Yang Weihuang, Li Jinchai, Zhang Yong, Huang Po-Kai, Lu Tien-Chang, Kuo Hao-Chung, Li Shuping, Yang Xu, Chen Hangyang, Liu Dayi, Kang Junyong
Fujian Key Lab of Semiconductor Materials and Applications, Department of Physics, Xiamen University, Xiamen, 361005 (P. R. China).
Department of Electrical and Computer Engineering and Center for Optoelectronics, University of North Carolina at Charlotte, Charlotte, NC, 28223 (USA).
Sci Rep. 2014 Jun 5;4:5166. doi: 10.1038/srep05166.
High internal efficiency and high temperature stability ultraviolet (UV) light-emitting diodes (LEDs) at 308 nm were achieved using high density (2.5 × 10(9) cm(-2)) GaN/AlN quantum dots (QDs) grown by MOVPE. Photoluminescence shows the characteristic behaviors of QDs: nearly constant linewidth and emission energy, and linear dependence of the intensity with varying excitation power. More significantly, the radiative recombination was found to dominant from 15 to 300 K, with a high internal quantum efficiency of 62% even at room temperature.
利用金属有机气相外延（MOVPE）生长的高密度（2.5×10⁹ cm⁻²）氮化镓/氮化铝量子点（QD）实现了308纳米处具有高内量子效率和高温稳定性的紫外（UV）发光二极管（LED）。光致发光显示了量子点的特征行为：线宽和发射能量几乎恒定，且强度与激发功率变化呈线性关系。更显著的是，发现辐射复合在15至300 K范围内占主导，即使在室温下内量子效率也高达62%。
