Nagashima Kazuki, Koga Hirotaka, Celano Umberto, Zhuge Fuwei, Kanai Masaki, Rahong Sakon, Meng Gang, He Yong, De Boeck Jo, Jurczak Malgorzata, Vandervorst Wilfried, Kitaoka Takuya, Nogi Masaya, Yanagida Takeshi
The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka Ibaraki, Osaka, 567-0047, Japan.
1] IMEC, Kapeldreef 75, B-3001 Heverlee (Leuven), Belgium [2] KU Leuven, Department of Physics and Astronomy (IKS), Celestijnenlaan 200D, 3001 Leuven, Belgium.
Sci Rep. 2014 Jul 2;4:5532. doi: 10.1038/srep05532.
On the development of flexible electronics, a highly flexible nonvolatile memory, which is an important circuit component for the portability, is necessary. However, the flexibility of existing nonvolatile memory has been limited, e.g. the smallest radius into which can be bent has been millimeters range, due to the difficulty in maintaining memory properties while bending. Here we propose the ultra flexible resistive nonvolatile memory using Ag-decorated cellulose nanofiber paper (CNP). The Ag-decorated CNP devices showed the stable nonvolatile memory effects with 6 orders of ON/OFF resistance ratio and the small standard deviation of switching voltage distribution. The memory performance of CNP devices can be maintained without any degradation when being bent down to the radius of 350 μm, which is the smallest value compared to those of existing any flexible nonvolatile memories. Thus the present device using abundant and mechanically flexible CNP offers a highly flexible nonvolatile memory for portable flexible electronics.
在柔性电子学的发展过程中,一种高度灵活的非易失性存储器是必不可少的,它是实现便携性的重要电路组件。然而,由于在弯曲时难以保持存储特性,现有非易失性存储器的灵活性受到限制,例如其可弯曲的最小半径在毫米范围内。在此,我们提出了一种使用银修饰的纤维素纳米纤维纸(CNP)的超柔性电阻式非易失性存储器。银修饰的CNP器件表现出稳定的非易失性存储效应,具有6个数量级的开/关电阻比以及较小的开关电压分布标准偏差。当弯曲到350μm的半径时,CNP器件的存储性能可以保持而不发生任何退化,这一数值与现有任何柔性非易失性存储器相比是最小的。因此,本研究中使用丰富且具有机械柔性的CNP制成的器件为便携式柔性电子学提供了一种高度灵活的非易失性存储器。