Avis Christophe, Jang Jin
Display Research Center, Department of Information Display, Kyung Hee University, Seoul 02447, Korea.
Membranes (Basel). 2021 Dec 22;12(1):7. doi: 10.3390/membranes12010007.
Crystalline tin oxide has been investigated for industrial applications since the 1970s. Recently, the amorphous phase of tin oxide has been used in thin film transistors (TFTs) and has demonstrated high performance. For large area electronics, TFTs are well suited, but they are subject to various instabilities due to operating conditions, such as positive or negative bias stress PBS (NBS). Another instability is hysteresis, which can be detrimental in operating circuits. Understanding its origin can help fabricating more reliable TFTs. Here, we report an investigation on the origin of the hysteresis of solution-processed polycrystalline SnO TFTs. We examined the effect of the carrier concentration in the SnO channel region on the hysteresis by varying the curing temperature of the thin film from 200 to 350 °C. Stressing the TFTs characterized further the origin of the hysteresis, and holes trapped in the dielectric are understood to be the main source of the hysteresis. With TFTs showing the smallest hysteresis, we could fabricate inverters and ring oscillators.
自20世纪70年代以来，人们一直在研究晶体氧化锡的工业应用。最近，氧化锡的非晶相已被用于薄膜晶体管（TFT），并显示出高性能。对于大面积电子产品来说，TFT非常适用，但由于工作条件，如正或负偏压应力PBS（NBS），它们会受到各种不稳定性的影响。另一种不稳定性是滞后现象，这在操作电路中可能是有害的。了解其起源有助于制造更可靠的TFT。在这里，我们报告了对溶液处理的多晶SnO TFT滞后现象起源的研究。我们通过将薄膜的固化温度从200℃变化到350℃，研究了SnO沟道区域中载流子浓度对滞后现象的影响。对TFT施加应力进一步表征了滞后现象的起源，并且被困在电介质中的空穴被认为是滞后现象的主要来源。利用显示出最小滞后现象的TFT，我们可以制造逆变器和环形振荡器。
