Yao Rihui, Fu Xiao, Li Wanwan, Zhou Shangxiong, Ning Honglong, Tang Biao, Wei Jinglin, Cao Xiuhua, Xu Wei, Peng Junbiao
State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China.
Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China.
Micromachines (Basel). 2021 Jan 22;12(2):111. doi: 10.3390/mi12020111.
In this paper, the effects of annealing temperature and other process parameters on spin-coated indium oxide thin film transistors (InO-TFTs) were studied. The research shows that plasma pretreatment of glass substrate can improve the hydrophilicity of glass substrate and stability of the spin-coating process. With Fourier transform infrared (FT-IR) and X-ray diffraction (XRD) analysis, it is found that InO thin films prepared by the spin coating method are amorphous, and have little organic residue when the annealing temperature ranges from 200 to 300 °C. After optimizing process conditions with the spin-coated rotating speed of 4000 rpm and the annealing temperature of 275 °C, the performance of InO-TFTs is best (average mobility of 1.288 cm·V·s, I/I of 5.93 × 10, and SS of 0.84 V·dec). Finally, the stability of InO-TFTs prepared at different annealing temperatures was analyzed by energy band theory, and we identified that the elimination of residual hydroxyl groups was the key influencing factor. Our results provide a useful reference for high-performance metal oxide semiconductor TFTs prepared by the solution method.
本文研究了退火温度和其他工艺参数对旋涂氧化铟薄膜晶体管（InO-TFTs）的影响。研究表明，玻璃基板的等离子体预处理可以提高玻璃基板的亲水性和旋涂工艺的稳定性。通过傅里叶变换红外光谱（FT-IR）和X射线衍射（XRD）分析发现，旋涂法制备的InO薄膜为非晶态，在200至300°C的退火温度范围内有机残留物较少。在旋涂转速为4000 rpm、退火温度为275°C的条件下优化工艺条件后，InO-TFTs的性能最佳（平均迁移率为1.288 cm²·V⁻¹·s⁻¹，Ion/Ioff为5.93×10⁷，亚阈值摆幅为0.84 V·dec⁻¹）。最后，通过能带理论分析了不同退火温度下制备的InO-TFTs的稳定性，我们确定消除残留羟基是关键影响因素。我们的结果为通过溶液法制备高性能金属氧化物半导体TFTs提供了有用的参考。
