Mustaqima Millaty, Yoo Pilsun, Huang Wei, Lee Bo Wha, Liu Chunli
Department of Physics and Oxide Research Center, Hankuk University of Foreign Studies, YongIn, Gyeonggi 449-791 South Korea.
Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen, 361005 China.
Nanoscale Res Lett. 2015 Apr 8;10:168. doi: 10.1186/s11671-015-0876-5. eCollection 2015.
We report the preparation of (111) preferentially oriented CoFe2O4 thin films on Pt(111)/TiO2/SiO2/Si substrates using a spin-coating process. The post-annealing conditions and film thickness were varied for cobalt ferrite (CFO) thin films, and Pt/CFO/Pt structures were prepared to investigate the resistance switching behaviors. Our results showed that resistance switching without a forming process is preferred to obtain less fluctuation in the set voltage, which can be regulated directly from the preparation conditions of the CFO thin films. Therefore, instead of thicker film, CFO thin films deposited by two times spin-coating with a thickness about 100 nm gave stable resistance switching with the most stable set voltage. Since the forming process and the large variation in set voltage have been considered as serious obstacles for the practical application of resistance switching for non-volatile memory devices, our results could provide meaningful insights in improving the performance of ferrite material-based resistance switching memory devices.
我们报道了通过旋涂工艺在Pt(111)/TiO2/SiO2/Si衬底上制备(111)择优取向的CoFe2O4薄膜。对钴铁氧体（CFO）薄膜的退火后条件和膜厚进行了变化，并制备了Pt/CFO/Pt结构以研究电阻开关行为。我们的结果表明，为了在设定电压中获得较小的波动，不经过形成过程的电阻开关是优选的，这可以直接从CFO薄膜的制备条件进行调节。因此，与较厚的薄膜不同，通过两次旋涂沉积的厚度约为100nm的CFO薄膜给出了具有最稳定设定电压的稳定电阻开关。由于形成过程和设定电压的较大变化被认为是电阻开关在非易失性存储器件实际应用中的严重障碍，我们的结果可以为提高铁氧体材料基电阻开关存储器件的性能提供有意义的见解。
