Liu Yihe, Meng Xianquan, Wan Xiang, Wang Zelong, Huang Huihui, Long Hao, Song Zengcai, Fang Guojia
Key Laboratory of Artificial Micro-and Nanostructures Ministry of Education and School of Physics and Technology, Wuhan University, Luojia Hill, Wuhan 430072, Hubei, People's Republic of China.
Nanoscale Res Lett. 2014 Nov 8;9(1):607. doi: 10.1186/1556-276X-9-607. eCollection 2014.
Tower-like GaN nanowires were successfully fabricated on Au-coated Si substrates by chemical vapor deposition. The tower-like nanowire consisted of a nanowire at the center and microcrystal layers stacked one by one around the nanowire. The tower-like nanowires grew along the [0001] direction, and the exposed surfaces of the microcrystal layers are [Formula: see text] and [Formula: see text] facets. The growth mechanism of the tower-like GaN nanowires was proposed. The field emission property of tower-like GaN nanowires was tested. Due to the sharp tips, nearly vertical alignment and rough surfaces caused by the microcrystal layers, the tower-like GaN nanowires show excellent performance in field emission with a turn-on field of 2.44 V/μm which is lower than those of other GaN one-dimensional (1D) nanomaterials.
81.15.Gh; 68.37.Lp; 68.37.Vj.
通过化学气相沉积法在涂有金的硅衬底上成功制备出了塔状氮化镓纳米线。塔状纳米线由位于中心的一根纳米线以及围绕该纳米线逐层堆叠的微晶层组成。塔状纳米线沿[0001]方向生长，微晶层的暴露面为[化学式：见原文]和[化学式：见原文]晶面。提出了塔状氮化镓纳米线的生长机制。对塔状氮化镓纳米线的场发射特性进行了测试。由于微晶层导致的尖锐尖端、近乎垂直的排列以及粗糙表面，塔状氮化镓纳米线在场发射方面表现出优异性能，开启场强为2.44 V/μm，低于其他氮化镓一维（1D）纳米材料。
81.15.Gh；68.37.Lp；68.37.Vj。
