Wu Jin, Yu Cheng-han, Li Shaozhou, Zou Binghua, Liu Yayuan, Zhu Xiaoqun, Guo Yuanyuan, Xu Hongbo, Zhang Weina, Zhang Liping, Liu Bin, Tian Danbi, Huang Wei, Sheetz Michael P, Huo Fengwei
Key Laboratory of Flexible Electronic (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM) and ⊥College of Science, Nanjing Technological University , Nanjing 211816, China.
Langmuir. 2015 Jan 27;31(3):1210-7. doi: 10.1021/la504260x. Epub 2015 Jan 14.
Developing a cost-effective nanolithography strategy that enables the production of subwavelength features with various shapes over large areas is a long-standing goal in the nanotechnology community. Herein, an inexpensive nanolithographic technique that combines the wafer-scale production capability of photolithography with the subwavelength feature size controllability of near-field photolithography was developed to fabricate centimeter-scale up to wafer-scale sub-100-nm variously shaped nanopatterns on surfaces. The wafer-scale elastomeric trench-based photomasks with subwavelength apertures created at the apexes were compatible with mask aligners, allowing for the production of wafer-scale subwavelength nanopatterns with adjustable feature sizes, shapes, and periodicities. The smallest feature sizes of 50 and 80 nm were achieved on positive tone and negative tone photoresist surfaces, respectively, which could be ascribed to a near-field optical effect. The fabricated centimeter-scale nanopatterns were functionalized to study cell-matrix adhesion and migration. Compared to currently developed nanolithographic methods that approach similar functionalities, this facile nanolithographic strategy combines the merits of low cost, subwavelength feature size, high throughput, and varied feature shapes, making it an affordable approach to be used in academic research for researchers at most institutions.
开发一种具有成本效益的纳米光刻策略，以实现大面积生产各种形状的亚波长特征，是纳米技术领域长期以来的目标。在此，我们开发了一种廉价的纳米光刻技术，该技术将光刻的晶圆级生产能力与近场光刻的亚波长特征尺寸可控性相结合，以在表面上制造厘米级直至晶圆级的亚100纳米各种形状的纳米图案。在顶点处创建有亚波长孔径的晶圆级弹性体沟槽基光掩模与掩模对准器兼容，从而能够生产具有可调节特征尺寸、形状和周期性的晶圆级亚波长纳米图案。在正性光刻胶表面和负性光刻胶表面分别实现了50纳米和80纳米的最小特征尺寸，这可归因于近场光学效应。对所制造的厘米级纳米图案进行功能化处理，以研究细胞与基质的粘附和迁移。与目前开发的具有类似功能的纳米光刻方法相比，这种简便的纳米光刻策略结合了低成本、亚波长特征尺寸、高通量和多样特征形状的优点，使其成为大多数机构的研究人员可用于学术研究的经济实惠的方法。
