MESA⁺ Institute for Nanotechnology, University of Twente, The Netherlands.
Nanotechnology. 2013 Jul 19;24(28):285303. doi: 10.1088/0957-4484/24/28/285303.
Several submicron probe technologies require the use of apertures to serve as electrical, optical or fluidic probes; for example, writing precisely using an atomic force microscope or near-field sensing of light reflecting from a biological surface. Controlling the size of such apertures below 100 nm is a challenge in fabrication. One way to accomplish this scale is to use high resolution tools such as deep UV or e-beam. However, these tools are wafer-scale and expensive, or only provide series fabrication. For this reason, in this study a versatile method adapted from conventional micromachining is investigated to fabricate protruding apertures on wafer-scale. This approach is called corner lithography and offers control of the size of the aperture with diameter less than 50 nm using a low-budget lithography tool. For example, by tuning the process parameters, an estimated mean size of 44.5 nm and an estimated standard deviation of 2.3 nm are found. The technique is demonstrated--based on a theoretical foundation including a statistical analysis--with the nanofabrication of apertures at the apexes of micromachined pyramids. Besides apertures, the technique enables the construction of wires, slits and dots into versatile three-dimensional structures.
几种亚微米探针技术需要使用孔径作为电气、光学或流体探针;例如,使用原子力显微镜精确书写或近场感应生物表面反射的光。在制造过程中将这种孔径的尺寸控制在 100nm 以下是一个挑战。实现这一尺寸的一种方法是使用高分辨率工具,如深紫外或电子束。然而,这些工具是晶圆级的且昂贵,或者只提供系列制造。出于这个原因,在这项研究中,从传统的微加工中采用了一种通用的方法来在晶圆级上制造突出的孔径。这种方法称为角光刻法,它使用低成本的光刻工具控制孔径直径小于 50nm。例如,通过调整工艺参数,可以得到 44.5nm 的平均孔径和 2.3nm 的标准偏差。这项技术是基于包括统计分析在内的理论基础,通过在微加工金字塔的顶点处进行纳米制造来演示的。除了孔径,该技术还可以将电线、狭缝和点构造到通用的三维结构中。