Wang Shunli, Chen Kai, Zhao Hailin, He Chenran, Wu Chao, Guo Daoyou, Zhao Nie, Ungar Goran, Shen Jingqin, Chu Xulong, Li Peigang, Tang Weihua
Key Laboratory of Optical Field Manipulation of Zhejiang Province, Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University Hangzhou 310018 China
College of Materials Science and Engineering, Xiangtan University Xiangtan 411105 Hunan Province China.
RSC Adv. 2019 Feb 19;9(11):6064-6069. doi: 10.1039/c8ra10371b. eCollection 2019 Feb 18.
Vertically aligned nanorod arrays (NRAs), with effective optical coupling with the incident light and rapid electron transport for photogenerated carriers, have attracted much interest for photoelectric devices. Herein, the monoclinic β-GaO NRAs with an average diameter/length of 500 nm/1.287 μm were prepared by the hydrothermal and post-annealing method. Then a circular Ti/Au electrode was patterned on β-GaO NRAs to fabricate solar-blind deep ultraviolet photodetectors. At zero bias, the device shows a photoresponsivity ( ) of 10.80 mA W and a photo response time of 0.38 s under 254 nm light irradiation with a light intensity of 1.2 mW cm, exhibiting a self-powered characteristic. This study presents a promising candidate for use in solar-blind deep ultraviolet photodetection with zero power consumption.
垂直排列的纳米棒阵列（NRAs），因其与入射光具有有效的光学耦合以及对光生载流子的快速电子传输，在光电器件领域引起了广泛关注。在此，通过水热法和后退火法制备了平均直径/长度为500 nm/1.287μm的单斜β-GaO纳米棒阵列。然后在β-GaO纳米棒阵列上制备圆形Ti/Au电极，以制造日盲型深紫外光电探测器。在零偏压下，该器件在波长为254 nm、光强为1.2 mW/cm²的光照下，光响应度为10.80 mA/W，光响应时间为0.38 s，呈现出自供电特性。本研究为零功耗日盲型深紫外光探测提供了一个有前景的候选方案。
