State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials , Sun Yat-sen University , Guangzhou 510275 , China.
Faculty of Engineering and Environment , Northumbria University , Newcastle Upon Tyne NE1 8ST , U.K.
ACS Appl Mater Interfaces. 2019 Feb 27;11(8):8412-8418. doi: 10.1021/acsami.8b20357. Epub 2019 Feb 13.
Deep ultraviolet (DUV) photodetectors have wide-range applications in satellite communications, air purification, and missile-plume detection. However, the critical barriers for the currently available wide-band gap semiconductor film-based DUV photodetectors are their low efficiency, complicated processes, and lattice mismatch with the substrate. Quantum dot (QD) devices prepared using solution-based methods can solve these problems. However, so far, there are no reports on photovoltaic-type DUV photodetectors using QDs. In this study, we propose a novel methodology to construct a hybrid zero-/two-dimensional DUV photodetector (p-type graphene/ZnS QDs/4H-SiC) with photovoltaic characteristics. The device exhibits excellent selectivity for the DUV light and has an ultrafast response speed (rise time: 28 μs and decay time: 0.75 ms), which are much better than those reported for conventional photoconductive photodetectors.
深紫外（DUV）光电探测器在卫星通信、空气净化和导弹羽流探测等领域有广泛的应用。然而，目前基于宽带隙半导体薄膜的 DUV 光电探测器存在效率低、工艺复杂以及与衬底晶格失配等关键障碍。采用溶液法制备的量子点（QD）器件可以解决这些问题。然而，迄今为止，尚无关于使用 QD 的光伏型 DUV 光电探测器的报道。在本研究中，我们提出了一种构建具有光伏特性的混合零维和二维 DUV 光电探测器（p 型石墨烯/ZnS QDs/4H-SiC）的新方法。该器件对 DUV 光具有优异的选择性，并且具有超快的响应速度（上升时间：28 μs，下降时间：0.75 ms），优于传统光导型光电探测器的报道。
