Tang Shujie, Wang Haomin, Wang Hui Shan, Sun Qiujuan, Zhang Xiuyun, Cong Chunxiao, Xie Hong, Liu Xiaoyu, Zhou Xiaohao, Huang Fuqiang, Chen Xiaoshuang, Yu Ting, Ding Feng, Xie Xiaoming, Jiang Mianheng
1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China [2] Graduate University of the Chinese Academy of Sciences, Beijing 100049, China.
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.
Nat Commun. 2015 Mar 11;6:6499. doi: 10.1038/ncomms7499.
The direct growth of high-quality, large single-crystalline domains of graphene on a dielectric substrate is of vital importance for applications in electronics and optoelectronics. Traditionally, graphene domains grown on dielectrics are typically only ~1 μm with a growth rate of ~1 nm min(-1) or less, the main reason is the lack of a catalyst. Here we show that silane, serving as a gaseous catalyst, is able to boost the graphene growth rate to ~1 μm min(-1), thereby promoting graphene domains up to 20 μm in size to be synthesized via chemical vapour deposition (CVD) on hexagonal boron nitride (h-BN). Hall measurements show that the mobility of the sample reaches 20,000 cm(2) V(-1) s(-1) at room temperature, which is among the best for CVD-grown graphene. Combining the advantages of both catalytic CVD and the ultra-flat dielectric substrate, gaseous catalyst-assisted CVD paves the way for synthesizing high-quality graphene for device applications while avoiding the transfer process.
在介电衬底上直接生长高质量、大尺寸单晶石墨烯域对于电子学和光电子学应用至关重要。传统上，在电介质上生长的石墨烯域通常只有约1μm，生长速率约为1nm min⁻¹或更低，主要原因是缺乏催化剂。在此，我们表明，作为气态催化剂的硅烷能够将石墨烯生长速率提高到约1μm min⁻¹，从而通过化学气相沉积（CVD）在六方氮化硼（h-BN）上合成尺寸达20μm的石墨烯域。霍尔测量表明，该样品在室温下的迁移率达到20000cm² V⁻¹ s⁻¹，这是CVD生长石墨烯中最好的之一。气态催化剂辅助CVD结合了催化CVD和超平介电衬底的优点，为合成用于器件应用的高质量石墨烯铺平了道路，同时避免了转移过程。
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