Shi Zhiyuan, Wang Xiujun, Li Qingtian, Yang Peng, Lu Guangyuan, Jiang Ren, Wang Huishan, Zhang Chao, Cong Chunxiao, Liu Zhi, Wu Tianru, Wang Haomin, Yu Qingkai, Xie Xiaoming
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, China.
School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, 19A Yuquan Road, Beijing, 100049, China.
Nat Commun. 2020 Feb 12;11(1):849. doi: 10.1038/s41467-020-14596-3.
Multilayer hexagonal boron nitride (h-BN) is highly desirable as a dielectric substrate for the fabrication of two-dimensional (2D) electronic and optoelectronic devices. However, the controllable synthesis of multilayer h-BN in large areas is still limited in terms of crystallinity, thickness and stacking order. Here, we report a vapor-liquid-solid growth (VLSG) method to achieve uniform multilayer h-BN by using a molten FeB alloy and N as reactants. Liquid FeB not only supplies boron but also continuously dissociates nitrogen atoms from the N vapor to support direct h-BN growth on a sapphire substrate; therefore, the VLSG method delivers high-quality h-BN multilayers with a controllable thickness. Further investigation of the phase evolution of the Fe-B-N system reveals that isothermal segregation dominates the growth of the h-BN. The approach herein demonstrates the feasibility for large-area fabrication of van der Waals 2D materials and heterostructures.
多层六方氮化硼（h-BN）作为用于制造二维（2D）电子和光电器件的介电衬底非常理想。然而，大面积可控合成多层h-BN在结晶度、厚度和堆叠顺序方面仍然受到限制。在此，我们报道一种气-液-固生长（VLSG）方法，通过使用熔融的FeB合金和N作为反应物来实现均匀的多层h-BN。液态FeB不仅提供硼，还能持续从N蒸气中解离氮原子，以支持在蓝宝石衬底上直接生长h-BN；因此，VLSG方法能够提供具有可控厚度的高质量h-BN多层膜。对Fe-B-N系统相演变的进一步研究表明，等温偏析主导了h-BN的生长。本文所述方法证明了大面积制造范德华二维材料和异质结构的可行性。
