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采用化学剥离光刻技术制备高性能超薄 In2O3 薄膜场效应晶体管和生物传感器。

Fabrication of High-Performance Ultrathin In2O3 Film Field-Effect Transistors and Biosensors Using Chemical Lift-Off Lithography.

机构信息

†California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States.

‡Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States.

出版信息

ACS Nano. 2015;9(4):4572-82. doi: 10.1021/acsnano.5b01211. Epub 2015 Apr 1.

DOI:10.1021/acsnano.5b01211
PMID:25798751
Abstract

We demonstrate straightforward fabrication of highly sensitive biosensor arrays based on field-effect transistors, using an efficient high-throughput, large-area patterning process. Chemical lift-off lithography is used to construct field-effect transistor arrays with high spatial precision suitable for the fabrication of both micrometer- and nanometer-scale devices. Sol-gel processing is used to deposit ultrathin (∼4 nm) In2O3 films as semiconducting channel layers. The aqueous sol-gel process produces uniform In2O3 coatings with thicknesses of a few nanometers over large areas through simple spin-coating, and only low-temperature thermal annealing of the coatings is required. The ultrathin In2O3 enables construction of highly sensitive and selective biosensors through immobilization of specific aptamers to the channel surface; the ability to detect subnanomolar concentrations of dopamine is demonstrated.

摘要

我们展示了一种基于场效应晶体管的高灵敏度生物传感器阵列的简单制造方法,该方法使用高效的高通量、大面积图案化工艺。化学剥离光刻技术用于构建具有高空间精度的场效应晶体管阵列,非常适合制造微米级和纳米级器件。溶胶-凝胶工艺用于沉积超薄(约 4nm)的 In2O3 薄膜作为半导体沟道层。通过简单的旋涂,水溶液溶胶-凝胶工艺可在大面积上生成厚度为几个纳米的均匀 In2O3 涂层,且仅需对涂层进行低温热退火。超薄的 In2O3 通过将特定的适体固定在沟道表面,实现了高灵敏度和选择性生物传感器的构建;演示了检测亚纳摩尔浓度多巴胺的能力。

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