Going Ryan, Seok Tae Joon, Loo Jodi, Hsu Kyle, Wu Ming C
Opt Express. 2015 May 4;23(9):11975-84. doi: 10.1364/OE.23.011975.
We present a novel waveguide coupling scheme where a germanium diode grown via rapid melt growth is wrapped around a silicon waveguide. A 4 fF PIN photodiode is demonstrated with 0.95 A/W responsivity at 1550 nm, 6 nA dark current, and nearly 9 GHz bandwidth. Devices with shorter intrinsic region exhibit higher bandwidth (30 GHz) and slightly lower responsivity (0.7 A/W). An NPN phototransistor is also demonstrated using the same design with 14 GHz f(T).
我们提出了一种新颖的波导耦合方案，其中通过快速熔体生长生长的锗二极管缠绕在硅波导周围。展示了一个4 fF的PIN光电二极管，在1550 nm处具有0.95 A/W的响应度、6 nA的暗电流和近9 GHz的带宽。本征区域较短的器件表现出更高的带宽（30 GHz）和略低的响应度（0.7 A/W）。还使用相同的设计展示了一个f(T)为14 GHz的NPN光电晶体管。
