Khone Darshika, Kumar Sandeep, Balal Mohammad, Barman Sudipta Roy, Kumar Sunil, Rana Abhimanyu Singh
Centre for Advanced Materials and Devices, School of Engineering and Technology, BML Munjal University, Gurgaon, 122413, India.
Department of Physics, Indian Institute of Technology Delhi, New Delhi, 110016, India.
Sci Rep. 2023 Aug 31;13(1):14297. doi: 10.1038/s41598-023-40891-2.
Highly transparent resistive-switching (RS) devices were fabricated by growing amorphous tantalum pentoxide (a-TaO) and indium tin oxide (a-ITO) thin films on barium-borosilicate glass (7059) substrates, using electron beam evaporation. These layers exhibited the transmittance greater than ~ 85% in the full visible region and showed RS behavior and battery-like IV characteristics. The overall characteristics of RS can be tuned using the top electrode and the thickness of a-TaO. Thinner films showed a conventional RS behavior, while thicker films with metal electrodes showed a battery-like characteristic, which could be explained by additional redox reactions and non-Faradaic capacitive effects. Devices having battery-like IV characteristics showed higher enhanced, retention and low-operation current.
通过电子束蒸发在钡硼硅酸盐玻璃(7059)衬底上生长非晶五氧化二钽(a-TaO)和氧化铟锡(a-ITO)薄膜,制备出了高透明电阻开关(RS)器件。这些层在整个可见光区域的透过率大于约85%,并表现出电阻开关行为和类似电池的IV特性。可以使用顶部电极和a-TaO的厚度来调节电阻开关的整体特性。较薄的薄膜表现出传统的电阻开关行为,而带有金属电极的较厚薄膜表现出类似电池的特性,这可以通过额外的氧化还原反应和非法拉第电容效应来解释。具有类似电池IV特性的器件表现出更高的增强、保持和低工作电流。