Velusamy Dhinesh Babu, Kim Richard Hahnkee, Cha Soonyoung, Huh June, Khazaeinezhad Reza, Kassani Sahar Hosseinzadeh, Song Giyoung, Cho Suk Man, Cho Sung Hwan, Hwang Ihn, Lee Jinseong, Oh Kyunghwan, Choi Hyunyoug, Park Cheolmin
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea.
School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea.
Nat Commun. 2015 Sep 2;6:8063. doi: 10.1038/ncomms9063.
The photocurrent conversions of transition metal dichalcogenide nanosheets are unprecedentedly impressive, making them great candidates for visible range photodetectors. Here we demonstrate a method for fabricating micron-thick, flexible films consisting of a variety of highly separated transition metal dichalcogenide nanosheets for excellent band-selective photodetection. Our method is based on the non-destructive modification of transition metal dichalcogenide sheets with amine-terminated polymers. The universal interaction between amine and transition metal resulted in scalable, stable and high concentration dispersions of a single to a few layers of numerous transition metal dichalcogenides. Our MoSe2 and MoS2 composites are highly photoconductive even at bending radii as low as 200 μm on illumination of near infrared and visible light, respectively. More interestingly, simple solution mixing of MoSe2 and MoS2 gives rise to blended composite films in which the photodetection properties were controllable. The MoS2/MoSe2 (5:5) film showed broad range photodetection suitable for both visible and near infrared spectra.
过渡金属二硫属化物纳米片的光电流转换令人印象极其深刻，使其成为可见光范围光电探测器的理想候选材料。在此，我们展示了一种制备微米厚柔性薄膜的方法，该薄膜由多种高度分离的过渡金属二硫属化物纳米片组成，用于实现优异的波段选择性光电探测。我们的方法基于用胺端基聚合物对过渡金属二硫属化物片层进行无损改性。胺与过渡金属之间的普遍相互作用导致了多种单层至几层过渡金属二硫属化物的可扩展、稳定且高浓度的分散体。我们的MoSe₂和MoS₂复合材料在分别照射近红外光和可见光时，即使在低至200μm的弯曲半径下也具有高光电导性。更有趣的是，简单地将MoSe₂和MoS₂进行溶液混合会产生混合复合薄膜，其中光电探测性能是可控的。MoS₂/MoSe₂（5:5）薄膜显示出适用于可见光和近红外光谱的宽范围光电探测。
