Kwak Kyoungwon, Yoon Hyewon, Hong Seongin, Kang Byung Ha
Department of Semiconductor Engineering, Gachon University, Seongnam 13120, Republic of Korea.
Department of Physics, Gachon University, Seongnam 13120, Republic of Korea.
Micromachines (Basel). 2024 Dec 5;15(12):1476. doi: 10.3390/mi15121476.
As the trajectory of developing advanced electronics is shifting towards wearable electronics, various methods for implementing flexible and bendable devices capable of conforming to curvilinear surfaces have been widely investigated. In particular, achieving high-performance and stable flexible transistors remains a significant technical challenge, as transistors are fundamental components of electronics, playing a key role in overall performance. Among the wide range of candidates for flexible transistors, two-dimensional (2D) molybdenum disulfide (MoS)-based transistors have emerged as potential solutions to address these challenges. Unlike other 2D materials, the 2D MoS offers numerous advantages, such as high carrier mobility, a tunable bandgap, superior mechanical strength, and exceptional chemical stability. This review emphasizes the novel techniques of the fabrication process, structure, and material to achieve flexible MoS transistor-based applications. Furthermore, the distinctive feature of this review is its focus on studies published in high-impact journals over the past decade, emphasizing their methods for developing MoS transistors into various applications. Finally, the review addresses technical challenges and provides an outlook for flexible and wearable MoS transistors.
随着先进电子技术的发展轨迹正朝着可穿戴电子设备转变，人们广泛研究了各种用于实现能够贴合曲面的柔性和可弯曲设备的方法。特别是，实现高性能且稳定的柔性晶体管仍然是一项重大技术挑战，因为晶体管是电子设备的基本组件，对整体性能起着关键作用。在众多柔性晶体管候选材料中，基于二维（2D）二硫化钼（MoS₂）的晶体管已成为应对这些挑战的潜在解决方案。与其他二维材料不同，二维MoS₂具有诸多优势，如高载流子迁移率、可调节带隙、优异的机械强度和出色的化学稳定性。本综述着重介绍了实现基于柔性MoS₂晶体管应用的制造工艺、结构和材料方面的新技术。此外，本综述的独特之处在于它关注过去十年在高影响力期刊上发表的研究，强调了将MoS₂晶体管开发成各种应用的方法。最后，该综述探讨了技术挑战，并对柔性和可穿戴MoS₂晶体管进行了展望。
